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Updated: Jul 2, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Xiong Pan1, Hanhui Jin1,2, Xiaoke Ku1,2
1School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, China. enejhh@emb.zju.edu.cn.
This study introduces an atom sampling method to improve coarse-grained (CG) models for graphene simulations. The new Tersoff sampling model enhances accuracy in predicting mechanical behaviors of graphene structures.
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