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Updated: Jul 23, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Lei Jiang1,2, Rui Xue1, Ding Liu1,2
1School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China.
This study introduces a new method using multimodal data fusion to detect node loss during monocrystalline silicon growth. The approach accurately identifies defects, enhancing quality control in semiconductor manufacturing.
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