A Comprehensive Characterization of the TI-LGAD Technology

Matias Senger1, Anna Macchiolo1, Ben Kilminster1

  • 1Physics Institute, University of Zurich, Irchel Campus, 8057 Zurich, Switzerland.

PubMed
Summary

Trench-isolated Low-Gain Avalanche Diodes (TI-LGADs) improve the fill factor for small pixels by replacing traditional p-stop terminations with silicon trenches. This advancement is crucial for precise charged particle detection in high-energy physics.