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Updated: Jul 23, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
Published on: July 5, 2019
Observation of positive trions in α-MoO3/MoS2 van der Waals heterostructures
Ravindra Kumar1,2, Vikash Mishra1, Tejendra Dixit3
1Department of Physics, Quantum Centre of Excellence for Diamond and Emergent Materials (QuCenDiEM), Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai, 600036, India. msrrao@iitm.ac.in.
Abstract:
Mono-layer transition metal dichalcogenides (TMDCs) have emerged as an ideal platform for the study of many-body physics. As a result of their low dimensionality, these materials show a strong Coulomb interaction primarily due to reduced dielectric screening that leads to the formation of stable excitons (bound electron-hole pairs) and higher order excitons, including trions, and bi-excitons even at room temperature. van der Waals (vdW) heterostructures (HSs) of TMDCs provide an additional degree of freedom for altering the properties of 2D materials because charge carriers (electrons) in the different atomically thin layers are exposed to interlayer coupling and charge transfer takes place between the layers of vdW HSs. Astoundingly, it leads to the formation of different types of quasi-particles. In the present work, we report the synthesis of vdW HSs, i.e., α-MoO3/MoS2, on a 300 nm SiO2/Si substrate and investigate their temperature-dependent photoluminescence (PL) spectra. Interestingly, an additional PL peak is observed in the case of the HS, along with A and B excitonic peaks. The emergence of a new PL peak in the low-energy regime has been assigned to the formation of a positive trion. The formation of positive trions in the HS is due to the high work function of α-MoO3, which enables the spontaneous transit of electrons from MoS2 to α-MoO3 and injection of holes into the MoS2 layer. In order to confirm charge transfer in the α-MoO3/MoS2 HS, systematic power and wavelength-dependent Raman and PL studies, as well as first-principle calculations using Bader charge analysis, have been carried out, which clearly validate our mechanism. We believe that this study will provide a platform towards the integration of vdW HSs for next-generation excitonic devices.
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