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    A novel "split-well resonant-phonon" (SWRP) design for terahertz quantum cascade lasers (THz-QCLs) demonstrates room-temperature negative differential resistance. This indicates suppressed leakage, paving the way for improved THz-QCL performance and temperature stability.

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    Area of Science:

    • Semiconductor Physics
    • Optoelectronics
    • Quantum Electronics

    Background:

    • Terahertz quantum cascade lasers (THz-QCLs) are crucial for various applications.
    • Improving the temperature performance and operational stability of THz-QCLs remains a significant challenge.
    • Existing designs often suffer from thermally activated leakage channels, limiting device performance.

    Purpose of the Study:

    • To introduce and evaluate a novel "split-well resonant-phonon" (SWRP) active region design for GaAs/Al0.3Ga0.7As THz-QCLs.
    • To investigate the temperature performance and potential of the SWRP design.
    • To demonstrate the suppression of leakage channels at room temperature.

    Main Methods:

    • Fabrication and characterization of THz-QCLs utilizing the SWRP active region design.
    • Analysis of current-voltage (I-V) characteristics to identify negative differential resistance (NDR).
    • Comparison of SWRP design with the conventional split-well direct-phonon (SWDP) design.

    Main Results:

    • Observation of negative differential resistance (NDR) at room temperature, signifying suppressed leakage.
    • Reduced overlap between the doped region and active level states in the SWRP design compared to SWDP.
    • Maintained a 36 meV energy gap between the lower laser level (LLL) and injector for efficient LLL depopulation.

    Conclusions:

    • The SWRP active region design effectively suppresses thermally activated leakage channels in THz-QCLs.
    • The design shows promising potential for enhanced temperature performance and operational stability.
    • Further investigation into the temperature performance and optimization of the SWRP structure is warranted.