Room-temperature efficient photoluminescence mechanism of indium doping lead-free colloidal MA3Bi2Br9 quantum dots
Ya Chu1, Yurong Guo2, Guangjiu Zhao2
1School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252059, China.
Abstract:
Lead halide perovskite quantum dots (QDs) are promising candidates for future optoelectronic devices due to their excellent photonic and electronic properties. However, poor stability and toxicity problems limit their further development. This work demonstrates the doping tactics to boost the optical properties of lead-free colloidal MA3Bi2Br9 QDs, the indium ion (In3+) doping presented herein is found to be effective in improving the photoluminescence (PL) properties of MA3Bi2Br9 (CH3NH2 = MA) QDs without alerting their favorable electronic structure. It has been elucidated by microscopy and diffraction results that the In3+ doping optimizes the QDs solution octahedron structure, and the PL red-shifted phenomenon coincides well with the analogous red-shifted obtained in the ultraviolet/visible (UV-Vis) absorption spectroscopy, which is due to the quantum confinement effect. And the nanosecond transient absorption (ns-TA) spectroscopy elucidates that the enhanced radiative recombination process contributes to enhanced stability and luminescence. The photoluminescence quantum yield (PLQY) of MA3Bi2Br9 QDs is increased by 60.7%. This work offers a valid strategy for improving the quality of the lead-free perovskite QDs.
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