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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Coherent control of a high-orbital hole in a semiconductor quantum dot
Jun-Yong Yan1, Chen Chen1, Xiao-Dong Zhang1
1Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China.
Abstract:
Coherently driven semiconductor quantum dots are one of the most promising platforms for non-classical light sources and quantum logic gates which form the foundation of photonic quantum technologies. However, to date, coherent manipulation of single charge carriers in quantum dots is limited mainly to their lowest orbital states. Ultrafast coherent control of high-orbital states is obstructed by the demand for tunable terahertz pulses. To break this constraint, we demonstrate an all-optical method to control high-orbital states of a hole via a stimulated Auger process. The coherent nature of the Auger process is proved by Rabi oscillation and Ramsey interference. Harnessing this coherence further enables the investigation of the single-hole relaxation mechanism. A hole relaxation time of 161 ps is observed and attributed to the phonon bottleneck effect. Our work opens new possibilities for understanding the fundamental properties of high-orbital states in quantum emitters and for developing new types of orbital-based quantum photonic devices.
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