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Updated: Jul 21, 2025

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
Published on: December 27, 2012
Dynamically changeable terahertz metamaterial absorbers with intelligent switch and high sensitivity and wide and
Qian Zhao1, Zao Yi1, Liang Bian1
1Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China.
Abstract:
In this work, we theoretically designed a dynamically changeable terahertz metamaterial absorber with intelligent switch and high sensitivity, wide band and narrow band perfect absorption based on the combination of Dirac semimetal (BDS) and vanadium dioxide (VO2). It features two methods for absorption adjustment: altering the Fermi energy level of BDS to modify the resonant frequency of the absorption peaks and utilizing the phase change of VO2 to regulate the absorption rate of the peaks. In addition, its rotational symmetric design ensures strong polarization-insensitivity. The simulation results demonstrate the presence of two narrowband absorption peaks and one mini-broadband absorption peak within the frequency range of 6.0-9.5 THz, all with absorption rates exceeding 90%. We provide an explanation of the absorption mechanism of the device, employing the relative impedance theory and localized surface plasmon resonance to analyze its electric field distribution. We also defined the refractive index sensitivity (S), which is SI = 378 GHz per RIU and SIII = 204 GHz per RIU. Our device possesses high sensitivity and two methods of adjusting absorption modes, which endow it with advantages in the fields of metamaterial absorbers, intelligent switch, and optical sensors.
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