Related Experiment Video
Updated: Jul 21, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Recent Advances in Transfer-Free Synthesis of High-Quality Graphene
Yinghan Li1,2, Kaixuan Zhou1,2, Haina Ci3
1College of Energy, Soochow Institute for Energy and Materials Innovations, SUDA-BGI Collaborative Innovation Center, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China.
Abstract:
High-quality graphene obtained by chemical vapor deposition (CVD) technique holds significant importance in constructing innovative electronic and optoelectronic devices. Direct growth of graphene over target substrates readily eliminates cumbersome transfer processes, offering compatibility with practical application scenarios. Recent years have witnessed growing strategic endeavors in the preparation of transfer-free graphene with favorable quality. Nevertheless, timely review articles on this topic are still scarce. In this contribution, a systematic summary of recent advances in transfer-free synthesis of high-quality graphene on insulating substrates, with a focus on discussing synthetic strategies designed by elevating reaction temperature, confining gas flow, introducing growth promotor and regulating substrate surface is presented.
More Related Videos
11:42Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
08:57Scalable Syntheses of Graphene Oxide and Reduced Graphene Oxide using Cascade Design Oxidation and Highly Basic Reduction Reactions
Published on: July 3, 2025