Influence of halogen elements in organic salts on n-type doping of CNT yarn for thermoelectric applications

Doping control of carbon nanotube (CNT) is crucial for thermoelectric (TE) application to maximize the power conversion efficiency. Despite the recent achievement of good air stability by organic salts for n-type carrier doping, their doping mechanism has not been systematically investigated so far. Here, we demonstrate doping of CNT yarn using ammonium salts with different halogen elements (tetra-butylammonium salts, TBAX where X = Cl, Br, or I) through the dipping technique. By changing the halogen element, we specifically investigated the halogen effect in the n-type doping process of CNT. The introduction of each material into the CNT yarn and its doping reaction were then studied by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy. Halogen element was found to affect the excess amount of TBA⁺ cation in the CNT yarn. The largest amount of excess TBA⁺ is found in the TBAI-doped yarn, which stabilizes the most amount of negative charge in CNT, enhancing the TE performance and its stability over one month in air. This study discovers the importance of the halogen element in the doping process of CNT-based TE materials by organic salts, simultaneously offering an efficient and stable n-type doping strategy.