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Updated: Jul 21, 2025

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Atomically Resolved Defects on Thin Molybdenum Carbide (α-Mo2C) Crystals
Saima A Sumaiya1, Ilker Demiroglu2, Omer R Caylan3
1Department of Mechanical Engineering, University of California Merced, Merced, California 95343, United States.
Abstract:
Thin transition metal carbides (TMCs) garnered significant attention in recent years due to their attractive combination of mechanical and electrical properties with chemical and thermal stability. On the other hand, a complete picture of how defects affect the physical properties and application potential of this emerging class of materials is lacking. Here, we present an atomic-resolution study of defects on thin crystals of molybdenum carbide (α-Mo2C) grown via chemical vapor deposition (CVD) by way of conductive atomic force microscopy (C-AFM) measurements under ambient conditions. Defects are characterized based on the type (enhancement/attenuation) and spatial extent (compact/extended) of the effect they have on the conductivity landscape of the crystal surfaces. Ab initio calculations performed by way of density functional theory (DFT) are employed to gather clues about the identity of the defects.

