Related Experiment Video
Updated: Jun 30, 2026

11:42
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
15.5K
Correction: A graphene/h-BN MEMS varactor for sub-THz and THz applications
Piotr A Dróżdż1, Maciej Haras1,2, Aleksandra Przewłoka1,3
1CENTERA Laboratories, Institute of High Pressure Physics Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland. pdrozdz@unipress.waw.pl.
Nanoscale
|July 27, 2023
Abstract:
Correction for 'A graphene/h-BN MEMS varactor for sub-THz and THz applications' by Piotr A. Dróżdż et al., Nanoscale, 2023, https://doi.org/10.1039/d2nr06863j.
Related Concept Videos
Types of Semiconductors
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Schottky Barrier Diode
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
Biasing of FET
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

