Related Experiment Video
Updated: Jul 21, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Stark Effect for Donors in Rolled-Up Quantum Well.
Luis Francisco Garcia Russi1, Ilia D Mikhailov1, Ruthber Antonio Escorcia Caballero2
1Escuela de Física, Facultad de Ciencias, Universidad Industrial de Santander, A. A. 678, Bucaramanga 680002, Colombia.
We calculated shallow donor energies in a rolled-up quantum well. Donor position, spiral geometry, and electric fields significantly impact the density of states and donor properties.
Area of Science:
- Condensed Matter Physics
- Quantum Mechanics
- Nanotechnology
Background:
- Rolled-up semiconductor nanomembranes offer unique quantum confinement.
- Shallow donors in quantum wells are crucial for electronic and optical properties.
- Understanding donor behavior under electric fields is key for device applications.
Purpose of the Study:
- To investigate the electronic properties of shallow donors in a rolled-up quantum well.
- To analyze the influence of electric fields and structural parameters on donor states.
- To explore the dipole moment and polarizability of donors in this novel geometry.
Main Methods:
- Numerical solution of the Schrödinger equation.
- Utilizing natural curvilinear coordinates for the rolled-up geometry.
- Analysis of density of states, dipole moment, and polarizability.
Main Results:
- Density of states curves show high sensitivity to donor position, spiral geometry, and electric field.
- Novel dependencies of donor dipole moment and polarizability on electric field strength and orientation were found.
- Anisotropic Stark effect leads to spike-like polarizability and sharp dipole moment variations.
Conclusions:
- The electronic properties of shallow donors are highly tunable in rolled-up quantum wells.
- The observed anisotropic Stark effect offers new possibilities for electric field control.
- This research provides insights for designing novel nanodevices based on tailored quantum structures.
Related Concept Videos
π Electron Effects on Chemical Shift: Overview
Schottky Barrier Diode
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
The Pauli Exclusion Principle
Stokes' Law
The expression for the force on a solid spherical object in a fluid is called Stokes' law. Stokes' law is valid only...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...

