Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters

Area of Science:

• Materials Science
• Surface Engineering
• Plasma Physics

Background:

• Silicon carbide (SiC) wafers are critical substrates for advanced semiconductor devices.
• The inherent hardness and inertness of SiC present significant challenges for surface processing.
• A need exists for efficient, damage-free methods for SiC wafer surface modification.

Purpose of the Study:

• To investigate atmospheric plasma processing for silicon carbide wafer surface modification.
• To determine the effects of various process parameters on material removal rates.
• To identify optimal parameters for rapid and uniform SiC wafer surface etching.

Main Methods:

• Point-residence experiments on SiC wafers using atmospheric plasma.
• Systematic variation of process parameters: Ar, CF4, and O2 flow rates, power, and torch-workpiece distance.
• Orthogonal experiments to determine optimal processing conditions based on derived influence laws.

Main Results:

• The study identified specific optimal parameters for atmospheric plasma etching of SiC.
• Maximum volume removal rate achieved at 550 W input power and 3.5 mm processing distance.
• Optimal gas flow rates determined as 15 SLM for Ar, 70 SCCM for CF4, and 20 SCCM for O2.

Conclusions:

• Atmospheric plasma processing is a viable technique for efficient SiC wafer surface modification.
• The identified optimal parameters enable rapid and uniform material removal, addressing processing challenges.
• This research provides a foundation for advanced SiC wafer surface treatment in semiconductor fabrication.