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Performance Analysis of an α-Graphyne Nano-Field Effect Transistor
Habibullah Khan1, Md Monirul Islam1, Rajnin Imran Roya1
1Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka 1000, Bangladesh.
Micromachines
|July 29, 2023
Summary
This study explores alpha-graphyne nanoribbons for Field-Effect Transistor (FET) technology, showing potential for high performance. While defects improve some metrics, they negatively impact power dissipation and delay time.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphyne exhibits promising electronic properties for next-generation Field-Effect Transistor (FET) technology.
- Achieving low power dissipation and reduced subthreshold swing are key goals in FET development.
Purpose of the Study:
- To investigate the electronic properties of alpha-graphyne nanoribbons for FET applications.
- To simulate the performance of an alpha-graphyne ballistic nanoribbon FET.
Main Methods:
- Utilized the tight-binding model with nearest-neighbor approximation for band structure calculations.
- Employed the non-equilibrium Green's function (NEGF) formalism to simulate I-V characteristics.
- Investigated the impact of defects on device performance.
Main Results:
- The simulated alpha-graphyne FET demonstrated a high Ion/Ioff ratio and a low subthreshold swing.
- The introduction of defects led to improvements in Ion/Ioff ratio and subthreshold swing.
- However, defects also resulted in increased delay time and dynamic power dissipation.
Conclusions:
- Alpha-graphyne nanoribbons show potential for high-performance FETs with desirable electronic characteristics.
- Defect engineering in alpha-graphyne FETs presents a trade-off between improved switching performance and increased power consumption/delay.
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