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X-Intersected Silicon Modulator of Well-Rounded Performance
Zijian Zhu1,2, Yingxuan Zhao1, Zhen Sheng1
1National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
Micromachines
|July 29, 2023
Summary
This study introduces a novel 3D doping design for silicon modulators, enhancing modulation efficiency and bandwidth. The advanced design improves performance for high-speed data communication applications.
Area of Science:
- * Photonics and Semiconductor Device Engineering
- * Integrated Optics and Silicon Photonics
Background:
- * Waveguide doping in silicon modulators is constrained by device footprint.
- * Optimizing doping profiles is crucial for enhancing modulator performance.
Purpose of the Study:
- * To propose and analyze an X-intersected silicon modulator utilizing three-dimensional (3D) doping.
- * To improve modulation efficiency and 3 dB bandwidth while minimizing optical loss.
Main Methods:
- * Implementation of an effective 3D Monte Carlo method for junction generation.
- * Design and simulation of an X-intersected modulator with inversely slanted junctions.
Main Results:
- * Achieved modulation efficiency of 1.09 V·cm.
- * Measured optical loss of 18 dB/cm.
- * Demonstrated 3 dB bandwidth exceeding 35 GHz.
Conclusions:
- * 3D doping design significantly enhances silicon modulator performance by reducing resistance and capacitance.
- * The proposed design offers a balanced trade-off between DC and AC characteristics.
- * This work presents a novel solution for high-speed datacom silicon modulators.
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