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Updated: Jul 20, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Electrostatic Tuning of Bilayer Graphene Edge Modes
Hira Ali1, Llorenç Serra1,2
1Institute for Cross-Disciplinary Physics and Complex Systems IFISC (CSIC-UIB), E-07122 Palma, Spain.
Abstract:
We study the effect of a local potential shift induced by a side electrode on the edge modes at the boundary between gapped and ungapped bilayer graphene. A potential shift close to the gapped-ungapped boundary causes the emergence of unprotected edge modes, propagating in both directions along the boundary. These counterpropagating edge modes allow edge backscattering, as opposed to the case of valley-momentum-locked edge modes. We then calculate the conductance of a bilayer graphene wire in presence of finger-gate electrodes, finding strong asymmetries with energy inversion and deviations from conductance quantization that can be understood with the gate-induced unprotected edge modes.
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