Related Experiment Video
Updated: Jul 20, 2025
09:49
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
4.1K
Semiempirical Two-Dimensional Model of the Bipolar Resistive Switching Process in Si-NCs/SiO2 Multilayers
Juan Ramirez-Rios1, Karla Esther González-Flores1, José Juan Avilés-Bravo1
1Electronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica, San Andrés Cholula 72840, Puebla, Mexico.
Nanomaterials (Basel, Switzerland)
|July 29, 2023
Summary
This study simulates resistive switching in silicon nanocrystal (Si-NC) memristors using a stochastic model. The model explains conductive filament formation and intermediate states observed in experiments, advancing memristor understanding.
Area of Science:
- Materials Science
- Nanotechnology
- Electrical Engineering
Background:
- Bipolar resistive switching memories (RRAM) are crucial for next-generation electronics.
- Silicon nanocrystals (Si-NCs) embedded in oxide matrices offer unique properties for RRAM devices.
- Understanding the formation and rupture of conductive filaments (CFs) is key to memristor reliability.
Purpose of the Study:
- To simulate the SET and RESET processes in Si-NC embedded bipolar resistive switching memories.
- To investigate the role of oxygen vacancies in forming conductive filaments within Si-NC/SiO2 multilayers.
- To compare simulation results with experimental current-voltage data for validation.
Main Methods:
- Development of a stochastic model based on 2D oxygen vacancy configurations.
- Simulation of resistive switching in Si-NC/SiO2 multilayer memristor devices.
- Analysis of devices with 1 and 3 Si-NC/SiO2 bilayers.
Main Results:
- The stochastic model successfully simulates SET and RESET processes.
- Si-NCs act as nucleation sites for oxygen vacancy agglomerates, promoting CF formation.
- An intermediate resistive state in the 3-bilayer device is explained by preferential oxygen vacancy generation along CF paths.
Conclusions:
- The stochastic model provides a robust framework for understanding memristor switching mechanisms.
- Si-NCs play a critical role in facilitating conductive filament formation in RRAM.
- The study elucidates the origin of intermediate resistive states, crucial for memristor design and control.
Related Concept Videos
01:25MOS Capacitor
839
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
839
01:27Biasing of Metal-Semiconductor Junctions
282
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
282
01:24Metal-Semiconductor Junctions
388
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
388
01:17Characteristics of MOSFET
419
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
419