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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Semiempirical Two-Dimensional Model of the Bipolar Resistive Switching Process in Si-NCs/SiO2 Multilayers

Juan Ramirez-Rios1, Karla Esther González-Flores1, José Juan Avilés-Bravo1

  • 1Electronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica, San Andrés Cholula 72840, Puebla, Mexico.

Nanomaterials (Basel, Switzerland)
|July 29, 2023
PubMed

Keywords:
conductive filamentsresistive switching memorysilicon nanocrystalstwo-dimensional oxygen vacancy configurationvalence change memory

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