Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor

We used capacitance-voltage (C-V), conductance-voltage (G-V), and noise measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN nanowire wrap-gate transistor (WGT). When the frequency is increased, the predicted surface trap density promptly drops, with values ranging from 9.1 × 10¹³ eV^-1∙cm^-2 at 1 kHz to 1.2 × 10¹¹ eV^-1∙cm^-2 at 1 MHz. The power spectral density exhibits 1/f-noise behavior in the barrier accumulation area and rises with gate bias, according to the 1/f-noise features. At lower frequencies, the device exhibits 1/f-noise behavior, while beyond 1 kHz, it exhibits 1/f²-noise behavior. Additionally, when the fabricated device governs in the deep-subthreshold regime, the cutoff frequency for the 1/f²-noise features moves to the subordinated frequency (~10² Hz) side.