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A Molecular Dynamics Study of Ag-Ni Nanometric Multilayers: Thermal Behavior and Stability
Florence Baras1, Olivier Politano1, Yuwei Li1
1ICB, UMR 6303 CNRS-Université de Bourgogne, 9 Avenue A. Savary, 47870 Dijon, France.
Nanomaterials (Basel, Switzerland)
|July 29, 2023
Summary
Molecular dynamics simulations reveal how silver (Ag) and nickel (Ni) nanometric multilayers behave. Increasing temperature enhances atomic mobility and causes Ni to dissolve into Ag, leading to grain boundary grooving and amorphous transitions.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Computational Materials Science
Background:
- Nanometric multilayers of immiscible metals present unique interfacial phenomena.
- Understanding metal interfaces is crucial for developing advanced materials and devices.
Purpose of the Study:
- To investigate the interfacial behavior of silver (Ag) and nickel (Ni) nanometric multilayers using molecular dynamics simulations.
- To analyze strain, defect formation, and relaxation at the Ag-Ni interface under varying temperatures.
Main Methods:
- Molecular dynamics (MD) simulations were employed to model Ag-Ni nanometric multilayers.
- Analysis included in-plane strain, defect formation, and atomic mobility at different temperatures.
- Simulations also examined triple junctions and grain boundary grooving dynamics.
Main Results:
- Increasing temperature enhanced atomic mobility and led to partial dissolution of Ni in amorphous Ag.
- Grain boundary grooving was observed at high temperatures (900-1000 K), with distinct roles for Ni and Ag mobilities.
- At 1100 K, the Ag layer transitioned to an amorphous/pre-melt state, inducing Ni grain rearrangement.
Conclusions:
- Temperature significantly influences the interfacial structure and dynamics of Ag-Ni nanometric multilayers.
- The study elucidates the mechanisms of atomic diffusion, dissolution, and phase transitions at metal interfaces.
- Findings provide insights into the behavior of immiscible metal systems relevant to materials engineering.

