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Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell

Zhiqiang Yu1,2,3, Jinhao Jia1, Xinru Qu1

  • 1Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China.

Molecules (Basel, Switzerland)
|July 29, 2023
PubMed

Keywords:
ZnO nanofilmsmultilevelnonvolatileoxygen vacanciessol–gel

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