A review on advanced band-structure engineering with dynamic control for nonvolatile memory based 2D transistors

Area of Science:

• Materials Science
• Condensed Matter Physics
• Electrical Engineering

Background:

• Conventional silicon (Si) memory cells face physical limitations, hindering future data accessibility demands.
• Two-dimensional (2D) atomically thin materials exhibit unique properties suitable for next-generation electronic devices.
• Moore's Law is challenged by the scaling limits of current semiconductor technology.

Purpose of the Study:

• To review recent advancements in 2D memory devices utilizing band structure engineering.
• To describe operational mechanisms and memory characteristics of various band structure engineering methods.
• To highlight the potential of band structure engineering for nonvolatile memory applications.

Main Methods:

• Exploration of band structure engineering techniques for 2D materials.
• Analysis of heterostructures, substrate engineering, chemical doping, intercalation, and electrostatic doping.
• Investigation of dynamic control of band structure for memory performance.

Main Results:

• 2D materials possess tunable bandgaps and Fermi levels crucial for electronic properties.
• Band structure engineering methods effectively modify electrical and optical characteristics.
• Dynamic control enables nonvolatile storage performance in advanced 2D devices.

Conclusions:

• Band structure engineering is a key strategy for overcoming limitations in current memory technology.
• 2D materials offer a promising platform for developing novel memory structures.
• Engineered 2D materials can achieve superior performance for nonvolatile memory applications.