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Related Concept Videos

Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

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A review on advanced band-structure engineering with dynamic control for nonvolatile memory based 2D transistors.

Chi Zhang1,2, Jing Ning1,2, Dong Wang1,2,3

  • 1The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China.

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Summary

Two-dimensional (2D) materials offer novel properties for next-generation electronics, overcoming silicon limitations. Band structure engineering in 2D materials enables advanced nonvolatile memory devices with superior performance.

Keywords:
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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Electrical Engineering

Background:

  • Conventional silicon (Si) memory cells face physical limitations, hindering future data accessibility demands.
  • Two-dimensional (2D) atomically thin materials exhibit unique properties suitable for next-generation electronic devices.
  • Moore's Law is challenged by the scaling limits of current semiconductor technology.

Purpose of the Study:

  • To review recent advancements in 2D memory devices utilizing band structure engineering.
  • To describe operational mechanisms and memory characteristics of various band structure engineering methods.
  • To highlight the potential of band structure engineering for nonvolatile memory applications.

Main Methods:

  • Exploration of band structure engineering techniques for 2D materials.
  • Analysis of heterostructures, substrate engineering, chemical doping, intercalation, and electrostatic doping.
  • Investigation of dynamic control of band structure for memory performance.

Main Results:

  • 2D materials possess tunable bandgaps and Fermi levels crucial for electronic properties.
  • Band structure engineering methods effectively modify electrical and optical characteristics.
  • Dynamic control enables nonvolatile storage performance in advanced 2D devices.

Conclusions:

  • Band structure engineering is a key strategy for overcoming limitations in current memory technology.
  • 2D materials offer a promising platform for developing novel memory structures.
  • Engineered 2D materials can achieve superior performance for nonvolatile memory applications.