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Published on: May 13, 2020
Controllable Resistive Switching in ReS2 /WS2 Heterostructure for Nonvolatile Memory and Synaptic Simulation.
Feihong Huang1, Congming Ke1, Jinan Li1
1Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, P. R. China.
New memristors using ReS2/WS2 heterostructures offer improved nonvolatile storage and synaptic functions. These devices exhibit tunable electrical and optical properties, outperforming individual materials for advanced computing architectures.
Area of Science:
- Materials Science
- Nanotechnology
- Computer Engineering
Background:
- Memristors are crucial for overcoming limitations in traditional von Neumann computer architecture.
- 2D van der Waals heterostructures offer unique properties for advanced memristor development.
- Integrating different materials in heterostructures provides enhanced controllability over optoelectronic properties.
Purpose of the Study:
- To demonstrate planar memristors with electrical and optical tunability.
- To investigate the performance of ReS2/WS2 van der Waals heterostructures for memristor applications.
- To explore the realization of biological synaptic functions and plasticity in these devices.
Main Methods:
- Fabrication of planar memristors based on ReS2/WS2 van der Waals heterostructures.
- Characterization of nonvolatile resistive switching behavior, including endurance and retention.
- Investigation of electrical tunability via electrostatic doping and channel length reduction.
- Evaluation of synaptic functions and plasticity under electrical stimulation.
- Analysis of optical modulation of resistive switching using varying illumination conditions.
Main Results:
- Demonstrated unipolar nonvolatile behavior with a high Roff/Ron ratio (up to 10^6), superior endurance, and retention compared to pure ReS2 and WS2 devices.
- Achieved notable reduction in set voltage with decreased channel length while maintaining high Roff/Ron ratios.
- Demonstrated tunable set voltage (4.50 to 0.40 V) through electrostatic doping.
- Successfully realized biological synaptic functions, including spike rate-dependent plasticity and paired-pulse facilitation.
- Showed optical modulation of resistive switching dependent on illumination energy and power, attributed to interlayer charge transfer.
Conclusions:
- ReS2/WS2 van der Waals heterostructure memristors offer significant advantages for nonvolatile memory and neuromorphic computing.
- Electrical and optical tunability provides enhanced control over device performance.
- The demonstrated synaptic functions and plasticity highlight the potential for brain-inspired computing applications.
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