Related Experiment Video
Updated: Jul 19, 2025
09:06
Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
8.1K
Strain-dependent magnetic ordering switching in 2D AFM ternary V-based chalcogenide monolayers
Kaijuan Pang1, Xiaodong Xu2, Yadong Wei2
1School of Physics, Harbin Institute of Technology, Harbin 150001, China. jiangyy@hit.edu.cn.
Nanoscale
|August 7, 2023
Summary
Antiferromagnetic (AFM) VXYSe4 monolayers exhibit tunable magnetic properties. Strain engineering can elevate their transition temperatures above room temperature, making them suitable for advanced nanodevices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Spintronics
Background:
- Antiferromagnetic materials offer potential for high-speed spintronic devices due to their lack of macroscopic magnetic moments.
- Two-dimensional (2D) ternary V-based chalcogenides (VXYSe4) are emerging as promising candidates.
Purpose of the Study:
- Investigate the magnetic properties of 2D VXYSe4 monolayers (X, Y = Al, Ga).
- Explore the effects of strain on their magnetic ordering and transition temperatures.
- Assess their potential for spintronic applications.
Main Methods:
- Density-functional theory (DFT) calculations.
- Monte Carlo simulations.
- Magnetic anisotropy calculations.
Main Results:
- Identified zigzag2-antiferromagnetic (AFM) ordering in VGa2Se4 with a Néel temperature of 18 K.
- Observed zigzag1-AFM coupling in VAl2Se4 (47 K) and VAlGaSe4 (33 K).
- Determined the easy magnetization axis is parallel to the y-axis.
- Demonstrated tunability from AFM to ferromagnetic (FM) states via biaxial stretching.
- Showed that compression strain can elevate transition temperatures above room temperature.
- Confirmed robust in-plane magnetic anisotropy under strain.
Conclusions:
- VXYSe4 monolayers are stable AFM materials with tunable magnetic properties.
- Strain engineering offers a viable route to control their magnetic behavior and enhance transition temperatures.
- These findings provide insights for designing advanced AFM-based nanodevices.
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