Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Carrier Transport01:21

Carrier Transport

468
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
468
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

378
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
378
MOSFET01:16

MOSFET

512
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
512
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

281
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
281
Characteristics of MOSFET01:17

Characteristics of MOSFET

419
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
419
Biasing of FET01:22

Biasing of FET

310
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
310

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Hierarchical self-assembly of atomically precise Au<sub>6</sub> nanoclusters into fibrillar superstructures with collective optical properties.

Nature communications·2026
Same author

Observation of tunable chiral spin textures with nonlinear optics.

Nature communications·2026
Same author

FSCL-BC: Federated supervised contrastive learning for breast cancer diagnosis with high sensitivity.

Computer methods and programs in biomedicine·2026
Same author

Synaptic Inhibition in the Accessory Olfactory Bulb Regulates Pheromone Location Learning and Memory.

FASEB bioAdvances·2026
Same author

Isomorphism in a Series of Five Homologous Compounds.

Crystal growth & design·2026
Same author

Evolving mortality trends in hypertension-associated ischemic heart disease among U.S. adults over two decades: a CDC wonder analysis (2000-2023).

Journal of human hypertension·2026

Related Experiment Video

Updated: Jul 19, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K

Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field-Effect Transistors.

Abde Mayeen Shafi1, Md Gius Uddin1, Xiaoqi Cui1

  • 1Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150, Finland.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|August 8, 2023
PubMed
Summary

Researchers improved molybdenum ditelluride (MoTe2) field-effect transistors (FETs) by engineering substrate strain. This enhances carrier mobility in 2D materials for advanced electronics.

Keywords:
Al2O3MoTe2carrier mobilitymetal-insulator transitiontensile strain

More Related Videos

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.1K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.7K

Related Experiment Videos

Last Updated: Jul 19, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K
Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.1K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.7K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Molybdenum ditelluride (MoTe2) is a promising 2D material for post-silicon electronics due to its silicon-like bandgap.
  • MoTe2 offers phase modulation and carrier type control but suffers from instability and low carrier mobility.

Purpose of the Study:

  • To develop a deterministic method for enhancing the performance of MoTe2 devices.
  • To improve carrier mobility and device stability in MoTe2 field-effect transistors (FETs).

Main Methods:

  • Inducing local tensile strain via substrate engineering with hole arrays.
  • Utilizing atomic layer deposition (ALD) for Al2O3 dielectric layers and passivation.
  • Fabricating MoTe2 FETs with engineered substrates and encapsulation.

Main Results:

  • Achieved significantly improved hole and electron mobilities in MoTe2 FETs (up to 130 cm²/Vs and 160 cm²/Vs, respectively).
  • Demonstrated up to a 6-fold increase in electron mobility due to local tensile strain.
  • Observed a distinct metal-insulator transition in the MoTe2 FETs.

Conclusions:

  • The proposed substrate engineering and encapsulation technique effectively enhances carrier mobility in MoTe2.
  • This method offers a pathway to overcome limitations of 2D materials for practical electronic applications.
  • The study presents a novel approach for improving 2D material-based electronic devices.