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Updated: Jul 19, 2025

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Published on: June 28, 2016
Selective Electron-Phonon Coupling in Dimerized 1T-TaS2 Revealed by Resonance Raman Spectroscopy
Sergio L L M Ramos1, Bruno R Carvalho2, Raphael Longuinhos Monteiro Lobato3
1Centro de Tecnologia em Nanomateriais e Grafeno (CTNano), Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 30123-970, Brazil.
Abstract:
The layered transition-metal dichalcogenide material 1T-TaS possesses successive phase transitions upon cooling, resulting in strong electron-electron correlation effects and the formation of charge density waves (CDWs). Recently, a dimerized double-layer stacking configuration was shown to form a Peierls-like instability in the electronic structure. To date, no direct evidence for this double-layer stacking configuration using optical techniques has been reported, in particular through Raman spectroscopy. Here, we employ a multiple excitation and polarized Raman spectroscopy to resolve the behavior of phonons and electron-phonon interactions in the commensurate CDW lattice phase of dimerized 1T-TaS. We observe a distinct behavior from what is predicted for a single layer and probe a richer number of phonon modes that are compatible with the formation of double-layer units (layer dimerization). The multiple-excitation results show a selective coupling of each Raman-active phonon with specific electronic transitions hidden in the optical spectra of 1T-TaS, suggesting that selectivity in the electron-phonon coupling must also play a role in the CDW order of 1T-TaS2.
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