Construction of II-type and Z-scheme binding structure in P-doped graphitic carbon nitride loaded with ZnO and ZnTCPP

Xuan Xu1, Xiangbo Feng2, Wei Wang3

  • 1Xi'an Key Laboratory of Advanced Photo-electronics Materials and Energy Conversion Device, School of Electronic Information, Xijing University, Xi'an 710123, Shaanxi, China; State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, China.