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Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

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Updated: Jul 19, 2025

3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry

Published on: April 29, 2020

Single Atomic Defect Conductivity for Selective Dilute Impurity Imaging in 2D Semiconductors.

Nam Thanh Trung Vu¹, Leyi Loh^1,2, Yuan Chen³

¹Physics Department, National University of Singapore, Singapore 117551, Singapore.

|August 11, 2023

Summary

This study introduces conductive atomic force microscopy for rapid, high-contrast imaging of single atomic impurities in 2D semiconductors. This technique enables precise defect identification crucial for advanced semiconductor development.

Keywords:

2D semiconductor atomic force microscopy direct tunneling impurity doping transition metal dichalcogenide

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Published on: January 19, 2018

Area of Science:

Semiconductor Physics
Materials Science
Nanotechnology

Background:

Precise impurity doping is vital for tailoring semiconductor properties, often requiring concentrations below parts per million.
Detecting and quantifying such dilute impurities in 2D semiconductors is challenging for conventional analytical methods.

Purpose of the Study:

To develop a method for rapid, high-contrast imaging of single atomic impurities in dilute concentrations.
To enable selective identification of minority defects in 2D semiconductor materials.

Main Methods:

Utilized conductive atomic force microscopy (c-AFM) for imaging.
Leveraged resonance-assisted tunneling to amplify conductivity changes caused by single impurity atoms.

Main Results:

Achieved over 100-fold local conductivity enhancement from single impurity atoms.
Demonstrated selective imaging of minority defects by exploiting impurity energy level dependence.
Successfully detected subsurface impurities with single monolayer depth resolution.

Conclusions:

Conductive atomic force microscopy offers a powerful tool for characterizing dilute impurities in 2D semiconductors.
This technique facilitates precise defect control, essential for advancing semiconductor technology.
Enables subsurface impurity analysis with high depth resolution.