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Published on: July 22, 2013
Application of Silicon Nanowire Field Effect Transistor (SiNW-FET) Biosensor with High Sensitivity
Huiping Li1, Dujuan Li1, Huiyi Chen1
1Ministry of Education Engineering Research Center of Smart Microsensors and Microsystems, School of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018, China.
Abstract:
As a new type of one-dimensional semiconductor nanometer material, silicon nanowires (SiNWs) possess good application prospects in the field of biomedical sensing. SiNWs have excellent electronic properties for improving the detection sensitivity of biosensors. The combination of SiNWs and field effect transistors (FETs) formed one special biosensor with high sensitivity and target selectivity in real-time and label-free. Recently, SiNW-FETs have received more attention in fields of biomedical detection. Here, we give a critical review of the progress of SiNW-FETs, in particular, about the reversible surface modification methods. Moreover, we summarized the applications of SiNW-FETs in DNA, protein, and microbial detection. We also discuss the related working principle and technical approaches. Our review provides an extensive discussion for studying the challenges in the future development of SiNW-FETs.
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