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Related Experiment Video

Updated: Jul 19, 2025

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
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A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology.

Jeong-Geun Kim1, Donghyun Baek2

  • 1Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.

Sensors (Basel, Switzerland)
|August 12, 2023
PubMed
Summary
This summary is machine-generated.

This study introduces a novel 4-bit true time delay integrated circuit (IC) fabricated using Gallium Nitride High-Electron-Mobility Transistor (GaN HEMT) technology, enabling beam-squint-free phased array antennas with wideband performance.

Keywords:
GaNphased array antennatrue time delay

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Area of Science:

  • Electrical Engineering
  • Materials Science
  • Antenna Technology

Background:

  • Phased array antennas require precise signal timing for beam steering.
  • Beam squint, a frequency-dependent beam deviation, degrades antenna performance.
  • Gallium Nitride (GaN) High-Electron-Mobility Transistor (HEMT) technology offers high-frequency and high-power advantages.

Purpose of the Study:

  • To present a wideband 4-bit true time delay integrated circuit (IC) for beam-squint-free phased array antennas.
  • To demonstrate the feasibility of using GaN HEMT technology for true time delay applications.
  • To achieve compact chip size and high performance.

Main Methods:

  • Implementation of a switched path circuit topology using Double Pole Double Throw (DPDT) and Single Pole Single Throw (SPDT) switches.
  • Utilization of Compact LC (CLC) π-networks with lumped elements for delay lines.
  • Integration of a negative voltage generator and SPI controller on a Printed Circuit Board (PCB) due to GaN technology limitations.

Main Results:

  • Achieved a maximum time delay of ~182 ps with a resolution of 10.5 ps over a DC-6 GHz bandwidth.
  • Demonstrated Root Mean Square (RMS) time delay and amplitude errors below 5 ps and 0.6 dB, respectively.
  • Measured insertion loss <6.8 dB, return losses >10 dB, and near-zero current consumption.

Conclusions:

  • This work represents the first demonstration of a true time delay IC utilizing GaN HEMT technology.
  • The developed IC effectively mitigates beam squint in phased array antennas.
  • The GaN HEMT-based true time delay IC offers a promising solution for advanced antenna systems.