Solution-Processed ZnO with Conductivity over 1000 S cm^-1 for ITO-Free Organic Photovoltaics

Developing transparent conductors to replace indium tin oxide (ITO) is a critical objective in the field of organic optoelectronics. Non-atomically doped (NAD) ZnO thin films, while currently exhibiting limited conductivity, are highly promising candidates due to their unique advantages, such as having complete transparency in both the visible and near-infrared spectral regions, solution processability, and the desired surface electronic properties. In this work, the impact of surface modification by insulating polymers on the ultraviolet-enhanced conductivity of NAD-ZnO films is investigated. It was found that polymer modifiers that are rich in amino and hydroxyl groups are effective at increasing the concentration of oxygen vacancies and the conductivity of NAD-ZnO films. The highest conductivity of over 1000 S cm^-1, which is more than twice as high as the previous record for NAD-ZnO films, is achieved using polyethylenimine ethoxylated (PEIE) to modify NAD-ZnO films. Subsequently, the replacement of ITO in organic photovoltaic devices by a ZnO/PEIE electrode is realized. The ZnO/PEIE-based OPV devices that were created exhibit performances comparable to those of ITO-based devices under simulated solar illumination and performances better than those achieved with ITO-based devices under simulated indoor illumination. These results make NAD-ZnO a promising candidate for the widespread replacement of ITO in optoelectronic devices.