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Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

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Edge Contacts to Atomically Precise Graphene Nanoribbons.

Wenhao Huang^1,2, Oliver Braun^1,2, David I Indolese²

¹Transport at Nanoscale Interfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland.

|August 14, 2023

Summary

This summary is machine-generated.

Researchers developed metallic edge contacts for graphene nanoribbons (GNRs), enabling new quantum devices. This breakthrough overcomes challenges in contacting tiny GNRs, paving the way for advanced electronics.

Keywords:

edge contacts electronic device graphene nanoribbons (GNRs)h-BN encapsulation quantum dot temperature-activated hopping

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Bottom-up synthesized graphene nanoribbons (GNRs) offer unique quantum properties and potential for next-generation electronics.
Contacting atomically precise GNRs is a significant challenge due to their small dimensions.
Existing top and bottom electrode methods face limitations with contact resistance scaling.

Purpose of the Study:

To develop a novel method for making electrical contacts to nine-atom-wide armchair GNRs (9-AGNRs).
To investigate charge transport mechanisms in GNRs with ultrashort metallic edge contacts.
To evaluate the performance of GNR-based field-effect transistors (FETs) with these new contacts.

Main Methods:

Synthesizing 9-AGNRs and encapsulating them in hexagonal boron-nitride (h-BN).
Fabricating devices with metallic edge contacts to achieve ultrashort contact lengths.
Characterizing charge transport via quantum dot behavior at low temperatures and hopping/tunneling at higher temperatures.

Main Results:

Demonstrated quantum dot behavior with Coulomb diamonds at 9 K, indicating single GNR transport.
Observed temperature-activated hopping and polaron-assisted tunneling above 100 K, enabling transport across multiple GNRs.
Achieved high on/off ratios (3 × 10^5) and significant on-state current at room temperature in short-channel FETs.

Conclusions:

Metallic edge contacts provide an effective method for interfacing with 9-AGNRs in ultra-short-channel FETs.
Encapsulation in h-BN protects GNRs while enabling novel contact geometries.
This approach offers comparable contact performance to traditional methods but with a drastically reduced device footprint.