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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

467
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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MOSFET: Enhancement Mode01:22

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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Solution-Processable Indenofluorenes on Polymer Brush Interlayer: Remarkable N-Channel Field-Effect Transistor

Ayse Can1, Ibrahim Deneme1, Gokhan Demirel2

  • 1Department of Nanotechnology Engineering, Abdullah Gül University, 38080 Kayseri, Turkey.

ACS Applied Materials & Interfaces
|August 15, 2023
PubMed
Summary

We developed new n-type organic semiconductors for high-performance organic field-effect transistors (OFETs). Alkyl chain engineering and surface modification enabled high electron mobility (μe) and current modulation under ambient conditions.

Keywords:
alkyl chain engineeringlow LUMO materialsn-type semiconductororganic field-effect transistorthin-film crystallinity

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Area of Science:

  • Materials Science: Organic semiconductors for electronic applications.
  • Chemistry: Synthesis and characterization of novel π-conjugated molecules.
  • Physics: Charge transport mechanisms in organic field-effect transistors (OFETs).

Background:

  • Solution-processable n-type molecular semiconductors with high electron mobility (μe ≥ 0.5 cm²/ (V·s)), high current modulation (Ion/Ioff ≥ 10⁶-10⁷), and near-zero turn-on voltage (Von) are crucial for organic field-effect transistors (OFETs) but lag behind other semiconductor types.
  • Developing such materials requires careful molecular design, control over thin-film morphology, and optimized interfacial properties.

Purpose of the Study:

  • To design, synthesize, and characterize a library of solution-processable, low-LUMO indenofluorene-dimalononitrile small molecules (β,β'-C-TIFDMTs) with varied alkyl chain lengths for n-type OFETs.
  • To investigate the structure-property relationships, focusing on how alkyl chain length influences solubility, solid-state packing, and thin-film morphology.
  • To achieve high electron mobility and performance in ambient conditions through molecular and interface engineering.

Main Methods:

  • Synthesis of β,β'-C-TIFDMTs with varying alkyl chain lengths (n=8, 12, 16).
  • Physicochemical characterization including solubility and solid-isotropic liquid transition enthalpy measurements.
  • Fabrication of OFETs using spin-coating on ultrathin polystyrene-brush surfaces with controlled grafting densities.
  • Thin-film characterization using techniques like Raman spectroscopy and microscopic imaging.
  • Performance evaluation of OFET devices under ambient conditions.

Main Results:

  • A correlation between transition enthalpies and solubility was identified, highlighting the role of alkyl chains in tuning cohesive energetics.
  • The C12-substituted semiconductor exhibited superior thin-film crystallization via a 'zipper effect' during thermal annealing, leading to large crystallites with lamellar stacking and favorable in-plane π-interactions.
  • OFETs fabricated with C12-TIFDMTs demonstrated excellent n-channel behavior in ambient conditions, achieving electron mobilities (μe) up to ~0.9 cm²/(V·s), current modulation (Ion/Ioff) of ~10⁷-10⁸, and near-zero turn-on voltage (Von ≈ 0 V).

Conclusions:

  • The study presents one of the highest-performing solution-processed n-channel OFETs under ambient conditions.
  • It elucidates the critical relationships between molecular structure (alkyl chain length), self-assembly, thin-film properties, and device performance.
  • The design strategies involving alkyl chain and interface engineering offer a promising route for developing novel high-electron-mobility donor-acceptor π-architectures.