Related Experiment Video

Updated: Jul 19, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.7K

Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions

Louis Farcis1, Bruno M S Teixeira1, Philippe Talatchian1

  • 1Université Grenoble Alpes, CEA, CNRS, Grenoble-INP, SPINTEC, Grenoble 38000, France.

Nano Letters
|August 17, 2023
PubMed

Keywords:
magnetic tunnel junctionspiking artificial neuronspiking neural networkspintronics

More Related Videos

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.7K
Fabrication of Magnetic Platforms for Micron-Scale Organization of Interconnected Neurons09:54

Fabrication of Magnetic Platforms for Micron-Scale Organization of Interconnected Neurons

Published on: July 14, 2021

4.9K

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
281
The Hall Effect01:30

The Hall Effect

Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
2.5K
Magnetic Field due to Moving Charges01:23

Magnetic Field due to Moving Charges

A stationary charge creates and interacts with the electric field, while a moving charge creates a magnetic field.
Consider a point charge moving with a constant velocity. Like the electric field, the magnetic field at any point is directly proportional to the magnitude of the charge and inversely proportional to the square of the distance between the source point and the field point. However, unlike the electric field, the magnetic field is always perpendicular to the plane containing the line...
8.8K
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
417
Magnetic Force Between Two Parallel Currents01:13

Magnetic Force Between Two Parallel Currents

Two long, straight, and parallel current-carrying conductors exert a force of equal magnitude on one another. The direction of the force depends on the current direction in the conductors.
The force exerted by the magnetic field due to the first conductor over a finite length of the second conductor is given as the product of the current in the second conductor and  the vector product of the length vector along the current element and the field due to the first conductor. According to the...
3.6K
Diamagnetism01:26

Diamagnetism

Materials consisting of paired electrons have zero net magnetic moments. However, when these materials are placed under an external magnetic field, the moments opposite to the field are induced. Such materials are called diamagnets. Diamagnetism is the response of the diamagnets when placed in an external magnetic field.
Diamagnetism was discovered by Anton Brugmans in 1778 when he observed that bismuth gets repelled by magnetic fields, thus theorizing that diamagnets get repelled by magnets....
2.4K