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Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions
Louis Farcis1, Bruno M S Teixeira1, Philippe Talatchian1
1Université Grenoble Alpes, CEA, CNRS, Grenoble-INP, SPINTEC, Grenoble 38000, France.
Nano Letters
|August 17, 2023
Summary
Researchers demonstrate voltage-controlled spintronic devices emulating spiking neurons. These compact magnetic tunnel junctions offer non-volatile memory and low energy consumption for dense neural networks.
Area of Science:
- Spintronics
- Unconventional Computing
- Neuromorphic Engineering
Background:
- Spintronic devices offer non-volatility, fast response, and small footprints for computing.
- Emulating neuron behavior in hardware is crucial for developing efficient artificial intelligence.
Purpose of the Study:
- To experimentally demonstrate voltage-driven magnetization dynamics in dual free layer perpendicular magnetic tunnel junctions (pMTJs) for emulating spiking neurons.
- To investigate the control of spiking rate via dc bias voltage and assess device performance for neural network applications.
Main Methods:
- Utilized dual free layer perpendicular magnetic tunnel junctions (pMTJs).
- Investigated voltage-driven magnetization dynamics.
- Controlled output spiking rate by adjusting dc bias voltage.
Main Results:
- Successfully emulated spiking neuron behavior using pMTJs.
- Demonstrated field-free operation and robustness against external magnetic fields.
- Achieved low energy consumption (4-16 pJ/spike) and scalability.
Conclusions:
- Voltage-driven pMTJs can effectively mimic neuron responses in hardware.
- The technology is suitable for dense neural networks, especially in embedded applications.
- This compact pMTJ structure enables the development of sub-100 nm spiking neural networks.
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