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Published on: November 11, 2013
Endogenous Nb2CTx/Nb2O5 Schottky heterostructures for superior lithium-ion storage
Junpeng Xiao1, Peng Yu2, Hong Gao2
1Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, PR China; School of Physics and Electronic Engineering, Northeast Petroleum University, Daqing 163318, PR China.
Abstract:
Schottky heterostructures have significant advantages for exciting charge transfer kinetics at material interfaces. In this work, endogenous Nb2CTx/Nb2O5 Schottky heterostructures with a large active surface area were constructed using an in-situ architectural strategy. The semiconductor Nb2O5 has a low work function, and during the construction of Nb2CTx/Nb2O5 Schottky heterostructures, there was an interfacial electron transfer, which resulted in a built-in electric field. The electrochemical reaction kinetics of Nb2CTx/Nb2O5 Schottky heterostructures were enhanced due to the rapid transfer of charge driven by the electric field. The Nb2CTx/Nb2O5 Schottky heterostructures have a large active surface area, which contributes to excellent electrolyte diffusion kinetics. Therefore, Nb2CTx/Nb2O5 Schottky heterostructures have excellent lithium-ion storage capacity with 575 mAh/g after 200 cycles at 0.10 A/g, and 290 mAh/g after 1000 cycles at 2.00 A/g, without capacity fading. Furthermore, in-situ X-ray diffraction and ex-situ X-ray photoelectron spectroscopy analyses reveal the mechanisms for structure evolution and lithium-ion storage optimization of Nb2CTx/Nb2O5 Schottky heterostructures during the electrochemical reaction. The construction of Schottky heterostructures with excited charge transport kinetics provides a novel idea for optimizing the lithium-ion storage activity of MXenes materials.
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