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Gate-Tunable Critical Current of the Three-Dimensional Niobium Nanobridge Josephson Junction
Shujie Yu1,2, Lei Chen1,2, Yinping Pan1
1National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China.
Abstract:
Recent studies have shown that the critical currents of several metallic superconducting nanowires and Dayem bridges can be locally tuned by using a gate voltage (Vg). Here, we report a gate-tunable Josephson junction structure constructed from a three-dimensional (3D) niobium nanobridge junction (NBJ) with a voltage gate on top. Measurements up to 6 K showed that the critical current of this structure can be tuned to zero by increasing Vg. The critical gate voltage was reduced to 16 V and may possibly be reduced further by reducing the thickness of the insulation layer between the gate and the NBJ. Furthermore, the flux modulation generated by Josephson interference of two parallel 3D NBJs can also be tuned by using Vg in a similar manner. Therefore, we believe that this gate-tunable Josephson junction structure is promising for superconducting circuit fabrication at high integration levels.
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