Numerical studies on a ternary AgInTe₂ chalcopyrite thin film solar cell

This paper theoretically outlines a new n-AlSb/p-AgInTe₂/p-BaSi₂ solar cell. The dominance of several factors such as depth, carrier density and defects of every layer on the photovoltaic (PV) outcome has been ascertained applying Solar Cell Capacitance Simulator (SCAPS)-1D computer-based simulator. The AgInTe₂ (AIT) solar cell has been probed for finding the role of BaSi₂ as a back surface field (BSF) layer. It is revealed that the device power conversion efficiency (PCE) increments from 30% to 34% owing to the use of BaSi₂ semiconducting BSF with V_OC = 0.90 V, J_SC = 43.75 mA/cm², FF = 86.42%, respectively. The rippling of the output parameters with respect to the change in series and shunt resistances has also been probed and demonstrated. All the findings reveal the prospect of n-AlSb/p-AIT/p-BaSi₂ dual-heterojunction thin film photovoltaic cell.