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Regulating buried interface properties and alleviating micro-strain of crystals for efficient perovskite solar cells

Shendong Xu1, Guozhen Liu1,2, Haiying Zheng3

  • 1Key Laboratory of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China. gzliu@issp.ac.cn.

Chemical Communications (Cambridge, England)
|August 21, 2023
PubMed

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...