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Updated: Jul 18, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Interface roughness effects and relaxation dynamics of an amorphous semiconductor oxide-based analog resistance

G R Haripriya1, Hee Yeon Noh1, Chan-Kang Lee1

  • 1Division of Nanotechnology, DGIST, 42988, South Korea. dear.hjlee@dgist.ac.kr.

Nanoscale
|August 22, 2023
PubMed

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