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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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The understanding of the impact of efficiently optimized underlap length on analog/RF performance parameters of

Md Akram Ahmad1, Jitendra Kumar2

  • 1Department of Electronics Engineering, IIT Dhanbad, Dhanbad, 826004, India. akram14407@gmail.com.

Scientific Reports
|August 24, 2023
PubMed

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