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Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications-Effects of Precursor and
Vladyslav Matkivskyi1, Oskari Leiviskä2, Sigurd Wenner3
1Department of Materials Science and Engineering, Norwegian University of Science and Technology, Alfred Getz vei 2B, 7034 Trondheim, Norway.
Materials (Basel, Switzerland)
|August 26, 2023
Summary
This study explored titanium oxide (TiOx) films for solar cell passivation using two precursors. Annealing and Aluminium oxide (AlOy) integration significantly improved passivation and reduced resistance.
Area of Science:
- Materials Science
- Photovoltaics
- Thin Film Deposition
Background:
- Titanium oxide (TiOx) films are crucial for passivating contact materials in solar cells.
- Atomic layer deposition (ALD) offers precise control over thin film properties.
Purpose of the Study:
- To evaluate Tetrakis (dimethylamido) titanium (TDMA-Ti) and titanium tetrachloride (TiCl4) precursors for TiOx deposition.
- To investigate the impact of post-deposition annealing and Aluminium oxide (AlOy) integration on TiOx passivation properties.
Main Methods:
- Atomic layer deposition (ALD) was used to deposit TiOx films.
- Comparative analysis of TDMA-Ti and TiCl4 precursors at similar deposition temperatures (150 °C).
- Investigation of post-deposition annealing effects and AlOy/TiOx stack performance.
Main Results:
- Both TDMA-Ti and TiCl4 are suitable precursors for TiOx deposition at 150 °C.
- Post-deposition annealing enhanced minority carrier lifetime (τeff) by over 200 µs.
- Aluminium oxide (AlOy) integration with TiOx reduced sheet resistance by 40%.
Conclusions:
- Optimized TiOx films using annealing and AlOy integration show promise for solar cell applications.
- The passivation quality of AlOy/TiOx stacks is dependent on precursor choice and deposition cycle ratios.
