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Updated: Jul 18, 2025
Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
Published on: July 26, 2016
Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications-Effects of Precursor and
Vladyslav Matkivskyi1, Oskari Leiviskä2, Sigurd Wenner3
1Department of Materials Science and Engineering, Norwegian University of Science and Technology, Alfred Getz vei 2B, 7034 Trondheim, Norway.
Abstract:
Two widely used atomic layer deposition precursors, Tetrakis (dimethylamido) titanium (TDMA-Ti) and titanium tetrachloride (TiCl4), were investigated for use in the deposition of TiOx-based thin films as a passivating contact material for solar cells. This study revealed that both precursors are suited to similar deposition temperatures (150 °C). Post-deposition annealing plays a major role in optimising the titanium oxide (TiOx) film passivation properties, improving minority carrier lifetime (τeff) by more than 200 µs. Aluminium oxide deposited together with titanium oxide (AlOy/TiOx) reduced the sheet resistance by 40% compared with pure TiOx. It was also revealed that the passivation quality of the (AlOy/TiOx) stack depends on the precursor and ratio of AlOy to TiOx deposition cycles.
