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Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs

Huy-Binh Do1, Quang-Ho Luc2, Phuong V Pham3

  • 1Faculty of Applied Science, Ho Chi Minh City University of Technology and Education, 01 Vo Van Ngan Street, Ho Chi Minh City 700000, Vietnam.

Micromachines
|August 26, 2023
PubMed

Keywords:
Hf 4f peaksacceptor-like and donor-like trapsborder trapsdefects in HfO2electronic band structureinterface trapsvalence band maximum

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