Related Experiment Video
Updated: Jun 19, 2026
09:01
High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
Published on: April 16, 2017
7.8K
Junction Temperature Optical Sensing Techniques for Power Switching Semiconductors: A Review
Ridwanullahi Isa1, Jawad Mirza2, Salman Ghafoor3
1Optical Communications and Sensors Laboratory (OCSL), Electrical Engineering Department, King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabia.
Micromachines
|August 26, 2023
Summary
Monitoring junction temperature in power electronic switches is vital for grid stability. This review details optical sensing techniques like infrared cameras and fiber Bragg gratings for accurate temperature measurement in MOSFETs and IGBTs.
Area of Science:
- Electrical Engineering
- Materials Science
- Physics
Background:
- Power electronic switches are crucial for power grid stability and control.
- Accurate junction temperature monitoring is essential for reliable operation and thermal management of power semiconductor devices.
- Various non-optical and optical measurement techniques exist, each with unique advantages and limitations.
Purpose of the Study:
- To review and summarize recent advancements in optical sensing techniques for measuring junction temperature in power-switching devices.
- To highlight the merits and challenges of infrared camera (IRC), thermal sensitive optical parameter (TSOP), and fiber Bragg grating (FBG) methods.
- To provide insights into calibration methods and future research directions for enhanced accuracy.
Main Methods:
- Review of existing literature on optical junction temperature measurement techniques.
- Focus on infrared camera (IRC), thermal sensitive optical parameter (TSOP), and fiber Bragg grating (FBG) sensing methods.
- Discussion of calibration procedures and strategies for improving measurement accuracy.
Main Results:
- Optical sensing techniques offer effective non-contact methods for junction temperature measurement.
- IRC, TSOP, and FBG methods present distinct benefits and drawbacks regarding resolution, accuracy, and applicability.
- Calibration and advanced techniques are crucial for achieving precise temperature readings in power devices.
Conclusions:
- Optical sensing techniques are promising for junction temperature monitoring in power electronics.
- Further research is needed to optimize existing methods and develop novel solutions for enhanced reliability and accuracy.
- Accurate thermal management through precise junction temperature measurement is key to improving power grid performance and longevity.
Related Concept Videos
01:22Semiconductors
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
01:20Types of Semiconductors
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
01:16Biasing of P-N Junction
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
01:24Metal-Semiconductor Junctions
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
01:27Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
01:22Switching of BJT
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...