Related Experiment Video
Updated: Jul 18, 2025

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
Published on: September 5, 2019
Silicon-Nanowire-Type Polarization-Diversified CWDM Demultiplexer for Low Polarization Crosstalk
Seok-Hwan Jeong1, Heuk Park2, Joon Ki Lee2
1Department of Electronic Materials Engineering, The University of Suwon, Hwaseong 18323, Republic of Korea.
Abstract:
Coarse wavelength division multiplexing (CWDM)-targeted novel silicon (Si)-nanowire-type polarization-diversified optical demultiplexers were numerically analyzed and experimentally verified. The optical demultiplexer comprised a hybrid mode conversion-type polarization splitter rotator (PSR) and a delayed Mach-Zehnder interferometric demultiplexer. Si-nanowire-based devices were fabricated using a commercially available Si photonics foundry process, exhibiting nearly identical spectral responses regardless of the polarization states of the input signals under the PSR. The experiment demonstrated a low insertion loss of 1.0 dB and a polarization-dependent loss of 1.0 dB, effectively suppressing spectral crosstalk from other channels by less than -15 dB. Furthermore, a TM-mode rejection-filter-integrated optical demultiplexer was designed and experimentally validated to mitigate unwanted TM-mode-related polarization crosstalk that arose from the PSR. It exhibited an improved polarization crosstalk rejection efficiency of -25 dB to -50 dB within the whole CWDM spectral range.
Related Concept Videos
Dielectric Polarization in a Capacitor
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Clipper Circuit
The operation of a clipper circuit can be exemplified by analyzing a dual-clipper configuration setup that integrates two ideal diodes, each paired with a biasing...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Schottky Barrier Diode

