Research Advances of Porous Polyimide-Based Composites with Low Dielectric Constant

With the burgeoning of the microelectronics industry, in order to improve the transmission speed between chips in large-scale integrated circuits to meet the demands of high integration, it is necessary for interlayer insulation materials to possess a lower dielectric constant (k). Polyimide (PI) has been widely used as interlayer insulation materials for large-scale integrated circuits, and the exploration on reducing their dielectric constant has attracted extensive attention in recent years. In this work, porous PI-based composites with a low dielectric constant are mainly reviewed. The application of porous SiO₂, graphene derivatives, polyoxometalates, polyhedral oligomeric silsesquioxane and hyperbranched polysiloxane in reducing the dielectric constant of PI is emphatically introduced. The key technical problems and challenges in the current research of porous polyimide materials are summarized, and the development prospect of low k polyimide is also expounded.