Optical polarization perturbed by shear strains of ultrasonic bulk waves in anisotropic semiconductors: Multiphysics...

Characterization of lattice properties of monocrystalline semiconductors (MS) has been rapidly advanced. Of particular interest is the use of shear strains induced by optoacoustic-bulk-waves. However, this technique has been hindered owing to the lack of quantitative correlations between optoacoustic-bulk-waves-induced shear strains and anisotropic photoelasticity of MS. Motivated by this, a multiphysics model is developed to interrogate the coupling phenomena and interaction between optical polarization and shear strains in MS. With the model, perturbation to the polarization of a monochromatic laser beam, upon interacting with optoacoustic waves in MS, is scrutinized quantitatively. Experimental results are in agreement with those from the model, both revealing the polarization perturbed by shear strains quantitatively depends on the crystal orientation and crystal-structure-related symmetry, which are jointly governed by mechanical/photoelastic/optical anisotropies of MS. The approach has paved a new way for selectively acquiring high-sensitivity shear components of optoacoustic-ultrasonic-waves for in situ, high-definition characterization of anisotropic MS.